C1061 PDF Datasheet – 50V, 3A, NPN Transistor – 2SC1061

This post explains for the transistor.

The Part Number is C1061, 2SC1061.

The function of this semiconductor is 50V, 3A, NPN Transistor.

The package is TO-220C Type

Manufacturer: Inchange Semiconductor

Preview images :C1061 pdf pinout

Description

The C1061 is 50V, 3A, Silicon NPN Power Transistor.

1. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

2. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.

3. Inverted Output: NPN transistors are known for producing an inverted output relative to their input. That is, if the input signal is high, the output signal will be low, and vice versa. This behavior is due to the way the transistor is designed and is an important characteristic for many electronic applications.

Features

1. With TO-220 package

2. Low saturation voltage

3. Complement to type 2SA671

4. Note: type 2SC1060 with short pin

 

C1061 datasheet transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 50 V

2. Collector to Emitter Voltage: Vceo = 50 V

3. Emitter to Base Voltage: Vebo = 4 V

4. Collector Current: Ic = 3 A

5. Collector Dissipation : Pc = 25 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. For use in low frequency power amplifier applications

C1061 PDF Datasheet


C1061 pdf

BD201 PDF Datasheet – 45V, 8A, NPN Power Transistor

Part Number: BD201, BD203

Function: 45V, 8A, Silicon NPN Power Transistor

Package: TO-220C Type

Manufacturer: Inchange Semiconductor

Images:

1 page
BD201 pdf datasheet

Description

BD201 is 45V, 8A, Silicon NPN Power Transistor. This is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.

Features

1. Collector-Emitter Breakdown Voltage :

(1) V(BR)CEO = 45V(Min)- BD201, 60V(Min)- BD203

2. Complement to Type BD202/204

3. Minimum Lot-to-Lot variations for robust device performance and reliable operation

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 45 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic =8 A

5. Collector Dissipation : Pc = 60 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

 

BD201 PDF Datasheet

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