13001 PDF Datasheet – 400V, 200mA, NPN Transistor

Part Number: 13001

Function: 400V, 200mA, NPN Transistor

Package: TO-126 Type

Manufacturer: Elite

Images:

13001 transistor

This post explains for the semiconductor 13001.

See the preview image and the PDF file for more information.

13001 pinout

Description

13001 is 400V, 200mA, NPN Epitaxial Silicon Transistor.

Features

1. Collector-Emitter Voltage: VCEO= 400V

2. Collector Dissipation: PC(max)= 1000mW TO-126

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 600 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 200 mA

5. Collector Dissipation : Pc = 1000 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Electrical Characteristics (TA=25°C) :

Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-emitter Voltage Transition Frequency Fall Time Storage Time Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE ff tf ts Test Conditions. […]

 

13001 Datasheet

Similar features and reference parts

MJE13001

KSE13001

C828 PDF – 25V, 50mA, NPN Transistor, TO-92, 2SC828

Part Number: C828

Function: 25V, 50mA, NPN Silicon Epitaxial Planar Transistor

Package: TO-92 Type

Manufacturer: SEMTECH

Images:C828 pdf pinout

Description

The C828 is NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.

These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g.

 

C828 datasheet transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 30 V

2. Collector to Emitter Voltage: Vceo = 25 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 50 mA

5. Power Dissipation : Ptot = 400 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C828 PDF Datasheet

C828 pdf