What is 2N5179?

It is a high-frequency NPN transistor commonly used in a variety of electronic applications, such as RF amplifiers, oscillators, and mixers. It has a maximum collector current rating of 50 mA and a maximum collector-emitter of 12 V.

Part Number: 2N5179

Function: RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR

Package: TO-72 type

Manufacturer: Advanced Power Technology

Image and Pinouts:

 

Description

The 2N5179 is a Silicon NPN transistor, designed for VHF and UHF equipment. It is ideal for pre-driver, low noise amplifier, and oscillator applications.

Advantages Vs Disadvantages

Advantages:

1. It is a common and widely available transistor, which makes it easy to find and use in electronic projects.

2. It has a high gain, which is beneficial for amplification in RF applications.

3. The transistor is relatively inexpensive, which makes it a cost-effective option for various electronic projects.

Disadvantages:

1. It has a relatively low collector current rating of 50 mA, which limits its use in high-current applications.

2. It is not suitable for use in power amplifiers due to its low power dissipation rating.

3. The transistor has a limited voltage rating of 30 V, which may not be sufficient for some applications.

 

Features

1. Silicon NPN, TO-72 packaged VHF/UHF Transistor

2. Low Noise, NF = 4.5 dB (max) @ 200 MHz

3. High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc

4. Characterized with S-Parameters

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 20 V

2. Collector to Emitter Voltage: Vceo = 12 V

3. Emitter to Base Voltage: Vebo = 2.5 V

4. Collector Current: Ic = 50 mA

5. Collector Dissipation : Pc = 300 mw

2N5179 Datasheet PDF Download

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What is 2SC1815?

This is a commonly used NPN transistor that is used in a wide range of electronic circuits. It has a maximum collector current of 150mA and a maximum collector-emitter voltage of 50V.

Part Number: 2SC1815

Marking Code : HF

Function: Silicon Epitaxial Planar Transistor

Package: SOT-23

Manufacturer: Galaxy Microelectronics

Image and Pinouts:

Features :

1. High voltage and high current  VCEO=50V(Min), IC=150mA(Max)

2. Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA
hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ))

3. Low noise.

4. Complementary to 2SA1015.

 

Advantages  Vs Disadvantages

Advantages:

1. High current gain, which allows for amplification of small signals
2. Low noise, which makes it suitable for use in audio circuits
3. Low voltage drop, which results in less power dissipation and higher efficiency
4. High frequency response, which makes it suitable for use in high-frequency circuits
5. Small size, which allows for compact circuit designs

Disadvantages:

1. Low maximum collector current, which restricts its use in high-power applications
2. Low maximum collector-emitter voltage, which restricts its use in high-voltage applications
3. Limited temperature range, which can be a concern in some applications

 

Maximum Ratings

1. Collector-Base Voltage : VCBO = 60 V
2. Collector-Emitter Voltage : VCEO = 50 V
3. Emitter-Base Voltage : VEBO = 5 V
4. Collector Current -Continuous : IC = 150 mA
5. Base Current : IB = 50 mA
6. Collector Dissipation : PC = 400 mW

Applications

1. Audio frequency general purpose amplifier applications

 

Other data sheets are available within the file: C1815

2SC1815 Datasheet PDF Download