What is D1047?

This is a high power NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. It is commonly used in power amplifier circuits, audio amplifier circuits, and switching circuits due to its high voltage and current rating.

Part Number: 2SD1047

Function: 140V, 12A, NPN Transistor

Package: TO-3P Type

Manufacturer: STMicroelectronics

Image and Pinouts:

 

Description

The D1047 is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. High power NPN epitaxial planar bipolar transistor. Advantages of the Power NPN transistor include its high power handling capability, high current gain, and low saturation voltage. It is also relatively inexpensive and widely available.

Features

1. High breakdown voltage VCEO = 140 V

2. Typical ft= 20 MHz

3. Fully characterized at 125 ºC

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 200 V

2. Collector to Emitter Voltage: Vceo = 140 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 12 A

5. Total dissipation at Tc = 25 °C : Ptot = 100 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Application

1. Power supply

Other data sheets are available within the file: 2SD1047

D1047 Datasheet PDF Download

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What is D2058?

This is a kind of NPN transistor. The D2058 is a versatile transistor that can be used in a wide range of electronic circuits for amplification and switching purposes. Its high current and voltage handling capabilities make it particularly suitable for use in power circuits. However, its limited frequency response and temperature sensitivity may limit its use in some high-performance applications.

Part Number: D2058, KSD2058

Function: 60V, Silicon NPN Power Transistor

Package: TO-220F Type

Manufacturer: SavantIC Semiconductor

Image

Description

This is a type of NPN bipolar junction transistor (BJT) that is commonly used in electronic circuits for amplification and switching applications.

Advantages Vs Disadvantages

Advantages:

1. High current handling capabilities:

Maximum collector current of 3A, which makes it suitable for use in circuits that require high current handling capabilities.

2. High voltage handling capabilities:

The transistor has a maximum collector-base voltage and a maximum collector-emitter voltage of 60V, making it suitable for use in circuits that require high voltage handling capabilities.

3. Easy to use:

The transistor is housed in a TO-220F package, which makes it easy to mount on a heatsink and incorporate into electronic circuits.

Disadvantages:

1. Limited frequency response:

The transistor has a low cutoff frequency, which limits its use in high-frequency applications.

2. Temperature sensitivity:

The transistor’s performance can be affected by changes in temperature, which can impact circuit performance.

Features

1. With TO-220F package

2. Complement to type 2SB1366

3. Low collector saturation voltage :  VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A

4. Collector power dissipation : Pc = 25W (Tc = 25°C)

 

Image and Pinouts:

Applications:

1. With general purpose applications

 

Absolute maximum ratings (Ta=25°C)

1. Collector-base voltage Open emitter : VCBO = 60 V

2. Collector-emitter voltage Open base : VCEO = 60 V

3. Emitter-base voltage Open collector : VEBO = 7 V

4. Collector current : IC = 3 A

5. Base current : IB = 0.5 A

D2058 Datasheet PDF

 

Other data sheets are available within the file: 2SD2058

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