3DD13009 PDF Datasheet – Vceo=400V, 12A, NPN Transistor

The Part Number is 3DD13009.

The function of this semiconductor is 400V, NPN Transistor.

The package is TO-220, TO-3PN Type

Manufacturer: LGE

Preview images :

1 page
3DD13009 pdf datasheet

Description

3DD13009 is 400V, 12A, Silicon NPN Power Transistor.

 

Features

1. Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.)

2. Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A

3. Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A

4. 100% tested

5. Minimum Lot-to-Lot variations for robust device performance and reliable operation […]

2 page
3DD13009 transistor equivalent

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 700 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 12 A

5. Collector Power Dissipation : Pc = 130 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications

1. Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switch mode applications such as switching regulators, inverters, Motor controls, Solenoid/Relay drivers and deflection circuit.

3DD13009 PDF Datasheet

3DD13009 pdf

Posts related to ‘ 3DD ~ ‘

 

Part number Description
3DD5011 D5011, BVcbo 900V, 10A – Jilin Sino
3DD13003 400V, 1.5A, NPN Transistor
3DD2498 600V, 6A, Silicon NPN Transistor
3DD127D 400V, 2.5A, 50W – NPN Transistor
3DD1555 1500V, 5A, 50W, NPN Transistor
3DD4202BD 400V, NPN Transistor – JILIN SINO

 

C2482 PDF Datasheet – 300V, 0.1A, NPN Transistor – 2SC2482

This post explains for the transistor.

The Part Number is 2SC2482.

The function of this semiconductor is 300V, 100mA, NPN Transistor.

The package is TO-92MOD Type

Manufacturer: Toshiba Semiconductor

Preview images :

1 page
C2482 transistor datasheet

Description

The C2482 is 300V, 100mA, Silicon NPN Epitaxial Type Transistor.

This NPN Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

 

Features

1. High breakdown voltage: VCEO = 300 V

2. Small collector output capacitance: Cob = 3.0 pF (typ.)

3. Recommended for chroma output and driver applications for line-operated TV horizontal. […]

2 page
C2482 pdf pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 300 V

2. Collector to Emitter Voltage: Vceo = 300 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 100 mA

5. Collector Dissipation : Pc = 900 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications

1. High-Voltage Switching and Amplifier

2. Color TV Horizontal Driver

3. Color TV Chroma Output

C2482 PDF Datasheet

Posts related to ‘ NPN Transistor ‘

Part number Description
2N930 45V, 0.03A, NPN Transistor ( PDF )
PMBT4401 40V, 600mA, NPN Transistor
2SD718 120V, 8A, NPN Transistor ( PDF )
C3068 Vceo=25V, 300mA, NPN Transistor
D5011 800V, NPN Transistor – 2SD5011
KT819 KT819 PDF – NPN Transistor, TO-220
C2938 400V, 10A, NPN Transistor, 2SC2938
C3229 300V, 0.1A, NPN Transistor – KEC ( PDF )
MJE13003B 400V, NPN Transistor, TO-92
BC548 BC548 PDF – 30V, 100mA, NPN Transistor, TO-92 Type