BC817-16L Datasheet PDF – 0.5A, 45V, NPN, Transistor

Part Number: BC817-16L

Function: 0.5A, 45V, NPN Silicon Transistor

Package: SOT-23 Type

Manufacturer: ON Semiconductor

Image and Pinouts:

BC817-16L datasheet

 

Description

This is 0.5A, 45V, General Purpose NPN Silicon Transistor.

Features

1. S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

2. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 45 V

2. Collector to Emitter Voltage: Vceo = 50 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 500 mA

5. Total Device Dissipation : Pc = 225mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

Other data sheets are available within the file:

BC817-25L, BC817-40L, BC817−16LT1G, BC817−16LT3G

 

BC817-16L Datasheet PDF Download


BC817-16L pdf

C3518 Transistor – 60V, 5A, NPN, Equivalent ( Datasheet PDF )

Part Number: C3518

Function: 60V, 5A, NPN Transistor

Package: TO-251, TO-252 Type

Manufacturer: Renesas Electronics

Imagea and Pinouts:

C3518 datasheet

 

Description

This is 60V, 5A, NPN Silicon Epitaxial Transistor.

The C3518 is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.

Features

1. High DC Current Gain hFE = 100 to 400

2. Low VCE(sat): VCE(sat) = 0.09 V TYP.

3. Complement to 2SA1385-Z

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 60 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 5 A

5. Collector Dissipation : Pc = 2 @

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

C3518 Datasheet PDF Download


C3518 pdf

Other data sheets are available within the file: 2SC3518, 2SC3518-Z