C5299 Datasheet PDF – 800V, 10A, NPN Transistor – Sanyo

This is one of the transistor types.

Part Number: C5299

Function: 800V, 10A, NPN Transistor

Package: TO-3PML Type

Manufacturer: SANYO (Panasonic)

Images :

C5299 datasheet

Description

This is 800V, 10A, NPN Triple Diffused Planar Silicon Transistor.

Features

1. High speed : tf =100ns typ.

2. High breakdown voltage : VCBO=1500V.

3. High reliability (Adoption of HVP process).

4. Adoption of MBIT process.

Pinouts:

C5299 transistor

Absolute Maximum Ratings :

1. Collector-to-Base Voltage : VCBO = 1500 V

2. Collector-to-Emitter Voltage : VCEO = 800 V

3. Emitter-to-Base Voltage : VEBO = 6 V

4. Collector Current : IC = 10 A

5. Collector Current (Pulse) : ICP = 25 A

6. Collector Dissipation : PC = 3.0 W, PC = 70 W ( Tc=25’C )

components

Applications:

1. Ultrahigh-Definition CRT Display

2. Horizontal Deflection Output

Other data sheets are available within the file: 2SC5298, 2SC5299, C5298

 

C5299 Datasheet PDF Download

C5299 pdf

2SD667A Datasheet PDF – 100V, 1A, NPN Transistor

Part Number: 2SD667A

Function: 100V, 1A, NPN Transistor

Package: TO-92MOD Type

Manufacturer: Hitachi -> Renesas Electronics

Image and Pinouts:
2SD667A datasheet

Description

The 2SD667A is 100V, 1A, Silicon NPN Epitaxial Transistor.

1. Bipolar Junction:

NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.

2. High Input Impedance:

NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.

3. Inverted Output:

NPN transistors are known for producing an inverted output relative to their input. That is, if the input signal is high, the output signal will be low, and vice versa. This behavior is due to the way the transistor is designed and is an important characteristic for many electronic applications.

 

Applications:

1. Low frequency power amplifier

2. Complementary pair with 2SB647/2SB647A

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to base voltage: VCBO = 120 V
2. Collector to emitter voltage: VCEO = 100 V
3. Emitter to base voltage: VEBO = 5 V
4. Collector current: IC = 1 A
5. Collector power dissipation: PC = 0.9 W

Other data sheets are available within the file: 2SD667, D667, D667A

2SD667A Datasheet PDF Download


2SD667A pdf