3DD127D PDF Datasheet – 400V, 2.5A, 50W – NPN Transistor

This post describes for the semiconductor 3DD127D.

The function of this semiconductor is 400V, 2.5A, NPN Transistor.

The package is TO-126F Type

The manufacturer of this parts is Huajing Microelectronics.

See the preview image and the 3DD127D Datasheet PDF file for more information.

Pinout3DD127D pinout

Description

The 3DD127D is a silicon NPN power switching transistor, which uses a planar process, a partial pressure ring terminal structure and a few child life control technology, integrated active anti-saturation network, improve the product breakdown voltage, switching speed and reliability.

A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

 

1 page
3DD127D transistor pdf datasheet

 

Features

1. Low switching losses

2. Reverse leakage current is small

3. High temperature characteristics

4. Suitable switching speed

5. High reliability

Applications:

1. Compact electronic energy saving lamp

2. Electronic ballast

3. General power switch circuit

 

3DD127D PDF Datasheet

 

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D1761 PDF Datasheet – 60V, 3A, NPN Transistor – 2SD1761

This post explains for the NPN Transistor.

The Full Part Number is D1761, 2SD1761.

The function of this semiconductor is 60V, 3A, NPN Transistor.

The package is TO-220FP Type

The manufacturers of this product is Rohm.

See the preview image and the PDF file for more information.

Preview images :

1 page
d1761 transistor datasheet pdf

Description

D1761 is 60V, 3A, Triple Diffused Planar NPN Silicon Transistor. This Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

Features

1. Low collector saturation voltage

2. Excellent current characteristics of DC current gain

3. Large collector dissipation : Pc = 30 W

4. Complementary pair with 2SB1187

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 80 V

2. Collector to Emitter Voltage: Vceo = 60 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 3 A

5. Collector Dissipation : Pc = 30 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

D1761 PDF Datasheet

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