This post describes for the semiconductor 3DD127D.
The function of this semiconductor is 400V, 2.5A, NPN Transistor.
The package is TO-126F Type
The manufacturer of this parts is Huajing Microelectronics.
See the preview image and the 3DD127D Datasheet PDF file for more information.
Pinout
Description
The 3DD127D is a silicon NPN power switching transistor, which uses a planar process, a partial pressure ring terminal structure and a few child life control technology, integrated active anti-saturation network, improve the product breakdown voltage, switching speed and reliability.
A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
NPN Configuration:
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
1 page
Features
1. Low switching losses
2. Reverse leakage current is small
3. High temperature characteristics
4. Suitable switching speed
5. High reliability
Applications:
1. Compact electronic energy saving lamp
2. Electronic ballast
3. General power switch circuit
3DD127D PDF Datasheet
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