NPN

2SD822 Transistor – 600V, 7A, NPN Transistor

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What is 2SD822?

This is high-voltage NPN silicon power transistor.

Function: 600V, 7A, Silicon NPN Transistor

Package: TO-126 Type

Manufacturer: Toshiba

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2SD822 datasheet pdf

Description

The 2SD822 is a high-voltage NPN silicon power transistor specifically designed for horizontal output applications in CRT color televisions. It is optimized for high-voltage switching, fast transition times, and robust operation under inductive load conditions. With a collector-base voltage rating up to 1500V and strong switching performance, it is well-suited for flyback transformer drive circuits and similar high-energy pulse applications.

Features

  • High collector-base voltage capability (VCBO = 1500V)
  • High-speed switching (tf ≈ 1.0µs max)
  • Low collector-emitter saturation voltage
  • Glass-passivated collector-base junction for improved reliability
  • Designed for high-voltage pulse and inductive load operation
  • Good ruggedness under flyback conditions

Pinout

2SD822 pinout

Typical Application Context

  • CRT horizontal deflection output stage
  • Flyback transformer driver circuits
  • High-voltage pulse generators
  • Switching power stages with inductive loads

Absolute Maximum Ratings (Ta = 25 °C)

Parameter Symbol Value Unit
Collector-Base Voltage VCBO 1500 V
Collector-Emitter Voltage VCEO 600 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 7 A
Emitter Current IE -7 A
Power Dissipation (Tc = 25°C) PC 50 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55 to 150 °C

Design Notes

  • Optimized for flyback operation — capable of handling high voltage spikes generated by transformer collapse
  • Fast fall time (tf) is critical for minimizing switching loss in horizontal deflection circuits
  • Requires proper snubber or damper network to control voltage overshoot
  • Base drive must be sufficiently strong (e.g., IB ≈ IC/5) to ensure deep saturation during switching
  • Thermal design is essential due to high pulse energy and switching stress

Typical Circuit Usage

  • CRT horizontal output transistor (HOT stage)
  • Flyback transformer switching
  • High-voltage pulse switching circuits
  • Inductive load switching with high dv/dt stress

How to Choose This Part

  • Select for high-voltage (>600V) switching environments
  • Ideal for legacy CRT or flyback-based designs
  • Ensure proper base drive and protection network design
  • Evaluate switching speed vs modern MOSFET/IGBT alternatives
  • Confirm thermal and SOA margins under pulsed conditions

Applications

  • Color TV horizontal output stages
  • High-voltage switching circuits
  • Flyback power supplies
  • Pulse power systems
  • Industrial high-voltage drivers

Alternative / Equivalent Products

  • BU508A (common HOT transistor alternative)
  • 2SD1555 (similar high-voltage transistor)
  • 2SC5388 (modern replacement option)
  • BU2520AF (integrated damper diode type)
  • IGBT or MOSFET replacements (depending on topology redesign)

2SD822 Datasheet PDF Download

2SD822 pdf

C5198 Datasheet PDF – 140V, 10A, NPN Transistor – Toshiba

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Transistor C5198 is a silicon NPN power transistor designed primarily for audio frequency power amplification and high-fidelity power output stages.

Part Number: 2SC5198

Function:  NPN Transistor ( Vceo = 140V min, Ic = 10A )

Package: TO-3PN Type

Manufacturer: Toshiba

See the preview image and the PDF file for more information.

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C5198 image

Description

This is 140V, 10A, Silicon NPN Triple Diffused Type Transistor.

The C5198 is a bipolar junction transistor (BJT) made by various electronics companies such as Toshiba and Sanyo. It is a NPN transistor that is typically used for audio amplification and switching applications. The 2SC5198 is commonly used in audio amplifier circuits, as well as in power amplifier stages and preamplifiers.

Features

  • Type: NPN Bipolar Junction Transistor
  • VCEO: 140V
  • IC: 10A
  • PC: 100W (Tc = 25°C)
  • Complementary Pair: 2SA1941 (PNP)
  • Construction: Triple Diffused (improves gain and ruggedness)

C5198 pinout

C5198 datasheet

Absolute Maximum Ratings (Ta= 25°C)

1. Collector-base voltage : VCBO = 140 V

2. Collector-emitter voltage : VCEO = 140 V

3. Emitter-base voltage : VEBO = 5 V

4. Collector current : IC = 10 A

5. Base current : IB = 1 A

6. Collector power dissipation  (Tc= 25°C) : PC = 100 W

7. Junction temperature : Tj  = 150 °C

Typical Usage Example

  • Used as output transistor in Class AB amplifier
  • Paired with 2SA1941 for complementary symmetry
  • Mounted on large heat sink for thermal stability

Design Notes (Critical Points)

  • Heat sinking is mandatory (100W dissipation capability)
  • Use emitter resistors (~0.22Ω) for current sharing and stability
  • Ensure proper biasing to avoid crossover distortion
  • Check SOA when used in linear region
  • Include protection circuits (speaker protection, overcurrent)

Typical Applications

  • Audio power amplifier output stages
  • Hi-Fi stereo amplifiers
  • High-current driver circuits
  • Linear power regulators
  • General-purpose power switching

Alternative / Equivalent Products

  • 2SC5200 (higher power variant)
  • TIP3055 (general-purpose alternative)
  • MJL3281A (high-end audio transistor)
  • 2SC2922 (premium audio grade)

C5198 Datasheet PDF