2SC2412K Datasheet PDF – 50V, 0.15A, NPN Transistor

Part Number: 2SC2412K

Function: 50V, 0.15A, NPN Transistor

Package: SOT-346 Type

Manufacturer: ROHM Semiconductor

Image and Pinouts:

2SC2412K datasheet

 

Description

This is 50V, 0.15A, Epitaxial planar type NPN silicon transistor

Features

1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)

2. Complements the 2SA1037AK / 2SA1576A /  2SA1774H / 2SA2029.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 50 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 150 mA

5. Total Dissipation: Pd = 200 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

components

Applications:

1. General purpose small signal amplifier

 

Other data sheets are available within the file: 2SC2412, 2SC4081, 2SC4617, 2SC5658, C2412K

2SC2412K Datasheet PDF Download


2SC2412K pdf

 

C5296 Transistor – 800V, 8A, NPN, 2SC5296 – Sanyo

This is one of the NPN transistor types. The C5296 is a high voltage, high current NPN transistor commonly used in power switching applications.

Part Number: 2SC5296

Function: 800V, 8A, NPN Transistor

Package: TO-3PML Type

Manufacturer: Sanyo Semicon Device

Image

c5296-npn-transistor

Description

This is 800V, 8A, NPN Triple Diffused Planar Silicon Transistor. It is commonly used in power supply circuits, motor control circuits, and other applications that require high voltage and high current switching.

Features

1. High speed : tf=100ns typ.
2. High breakdown voltage : VCBO=1500V.
3. High reliability (Adoption of HVP process).
4. Adoption of MBIT process.
5. On-chip damper diode

Pinout for C5296

c5296-datasheet-pinout

Absolute Maximum Ratings at Ta = 25°C

1. Collector-to-Base Voltage : VCBO = 1500 V
2. Collector-to-Emitter Voltage : VCEO = 800 V
3. Emitter-to-Base Voltage : VEBO = 6 V
4. Collector Current : IC = 8 A
5. Collector Current (Pulse) : ICP = 16 A
6. Collector Dissipation : PC = 3.0 W
7. Junction Temperature: Tj = 150°C

 

Advantages

1. High voltage and current rating make it suitable for power switching applications

2. High gain allows for low drive current requirements

3. Low saturation voltage reduces power dissipation and improves efficiency

4. TO-3PML package provides easy mounting and heat dissipation

Disadvantages

1. Relatively slow switching speed compared to some other power transistors

2. May require additional protection circuitry to prevent damage from voltage spikes or current surges

3. May not be suitable for very high frequency switching applications

 

Applications

1. Ultrahigh-Definition CRT Display

2. Horizontal Deflection Output

C5296 Transistor Datasheet


 

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