Part Number: C3356

Function: 12V, NPN RF Transistor.

Package: Minimode Type

Manufacturer: Renesas Electronics

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Description

This is 12V, 100mA, NPN Silicon RF Transistor.

Features

1. Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz

2. High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 20 V

2. Collector to Emitter Voltage: Vceo = 12 V

3. Emitter to Base Voltage: Vebo = 3 V

4. Collector Current: Ic = 100 mA

5. Total Power Dissipation : Ptot = 200 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

Pinouts:

Applications:

1. Low noise amplifier at VHF, UHF and CATV band

C3356 Datasheet PDF Download

Other data sheets are available within the file:

2SC3356, 2SC3356-A, 2SC3356-T1B, 2SC3356-T1B-A

This is one of the transistor types.

Part Number: C3987

Function: 50V, 3A, NPN Darlington Transistor

Package: TO-220ML Type

Manufacturer: SANYO (Panasonic)

See the preview image and the PDF file for more information.

Images :

 

Description

The C3987 is 50V, 3A, NPN Planar Silicon Darlington Transistor.

Features

1. High DC current gain.

2. Large current capacity and wide ASO.

3. On-chip Zener diode of 60±10V between collector and base.

4. Uniformity in collector-to-base breakdown voltage due to the adoption of an accurate impurity diffusion process.

5. High inductive load handling capability.

6. Micaless package facilitating mounting.

Absolute Maximum Ratings at Ta = 25°C

1. Collector-to-Base Voltage : VCBO = 50 V

2. Collector-to-Emitter Voltage : VCEO = 50 V

3. Emitter-to-Base Voltage : VEBO = 6 V

4. Collector Current : IC = 3 A

5. Collector Current (Pulse) : ICP = 6 A

6. Base Current : IB = 0.6 A

 

C3987 Pinout

Applications

1. Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers).

 

Other data sheets are available within the file: 2SC3987

C3987 Datasheet PDF Download