Part Number: D1164

Function: 60V, 2A, NPN Transistor

Package: TO-252 ( MP-3Z ) Type

Manufacturer: NEC => Renesas Technology

Image and Pinouts:

 

Description

This is 60V, 2A, NPN Silicon Epitaxial Transistor.

The D1164 is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.

Features

1. High hfe = 2,000 to 30,000

Absoulte Maximum Ratings

1. Collector to Base Voltage: Vcbo = 150 V
2. Collector to Emitter Voltage: Vceo = 60 V
3. Emitter to Base Voltage: Vebo = 8.0 V
4. Collector Current (DC) : Ic = 2A
5. Total Power Dissipation : Pt = 2.0 W

 

Electrical Characteristics :

 

Other data sheets are available within the file: 2D1164-Z, 2SD1164, D1164Z

 

D1164 Datasheet PDF Download

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What is PN2369A?

This is a type of NPN bipolar junction transistor (BJT) designed for use in low-power switching and amplification applications. It has a maximum collector-emitter voltage rating of 15 volts and a maximum collector current rating of 200 milliamperes.

Function: NPN Switching Transistor

Package: TO-92 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

 

Description

This is NPN Switching Transistor, This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.

The transistor has a high current gain and low saturation voltage, making it suitable for use in a wide range of electronic circuits, such as small signal amplifiers, oscillators, and logic gates.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 40 V

2. Collector to Emitter Voltage: Vceo = 15 V

3. Emitter to Base Voltage: Vebo = 4.5 V

4. Collector Current: Ic = 200mA

5. Total Dissipation : Pc =350 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

PN2369A Datasheet PDF Download

Other data sheets are available within the file: MMBT2369A, PN2369