Part Number: PDTC115EE
Marking : 46
Function: NPN resistor-equipped transistors / R1 = 100 kOhm, R2 = 100 kOhm
Package: SOT-416 Type
Manufacturer: NXP Semiconductors.
Image and Pinouts:
Description
This is NPN resistor equipped transistor.
Features
1. Built-in bias resistors
2. Simplified circuit design
3. Reduction of component count
4. Reduced pick and place costs.
Applications:
1. General purpose switching and amplification
2. Inverter and interface circuits
3. Circuit driver.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 50 V
2. Collector to Emitter Voltage: Vceo = 50 V
3. Emitter to Base Voltage: Vebo = 10 V
4. Total Power Dissipation : Ptot = 150 mW
5. Junction Temperature: Tj = 150°C
6. Storage Temperature: Tsg = -65 ~ +150°C
Ordering Information and package :
1. PDTC115EEF SOT490
2. PDTC115EK SOT346
3. PDTC115EM SOT883
4. PDTC115ES SOT54 (TO-92)
5. PDTC115ET SOT23
6. PDTC115EU SOT323
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
PDTC115EE Datasheet PDF Download
Other data sheets are available within the file:
PDTA115, PDTA115EEF, PDTA115EK, PDTA115EM, PDTA115ES
