Part Number: D1164

Function: SILICON POWER TRANSISTOR

Package: TO-252 ( MP-3Z ) Type

Manufacturer: Renesas Electronics

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Description

The D1164 is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.

Features

1. High Hfe = 2,000 to 30,000

Absolute Maximum Ratings

1. Collector to Base Voltage : VCBO = 150 V
2. Collector to Emitter Voltage : VCEO = 60 V
3. Base to Emitter Voltage : VEBO = 8.0 V
4. Collector Current (DC) : IC(DC) = 2 A
5. Collector Current (pulse) : IC(pulse) = 4 A
6. Total Power Dissipation (TA = 25°C) : PT = 2.0 W

Pinout:

 

Other data sheets are available within the file: 2SD1164, 2SD1164-Z, D1164-Z

D1164 Datasheet

 

 

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Part Number: 2SD649

Function: NPN Triple Diffused Junction Mesa Transistor

Package: TO-3 Type

Manufacturer: Panasonic Corporation

Pinouts:

 

Description

1. High Breakdown Voltage: Vcbo = 1500V (min)
2. High Reliability

Absolute Maximum Ratings

1. Collector-Base Voltage : VCBO = 1500 V
2. Collector-Emitter Voltage : VCES = 1500 V
3. Emitter-Base Voltage : VEBO = 5 V
4. Collector Current- Continuous : IC = 3 A
5. Collector Current-Pulse : ICP = 5 A
6. Collector Power Dissipation @ TC≤90′ : PC = 35 W

Applications

1. Line-operated Horizontal
2. Deflection Output

Other data sheets are available within the file: 2SD602, 2SD602A, D602, D602A, D649

2SD649 Datasheet PDF Download