Part Number: D1090

Function: 5A, 200V, NPN DOUBLE DIFFUSED TYPE Transistor

Package: TO-3P type

Manufacturer: Toshiba

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Description

1. High Voltage: Vcbo = 180V
2. High DC Current Gain : hFE = 500 (Min.)
3. Large Collector Power Dissipation Capability : Pc = 80W

Maxiumum Ratings

1. Collector-Base Voltage: Vcbo = 200 V
2. Collector-Emitter Voltage: Vceo =180 V
3. Emitter-Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 5 A
5. Base Current : Ib = 2 A
6. Collector Power Dissipation : Pc = 80 W
7. Junction Temperature: Tj = 150°C
8. Storage Temperature: Tsg = -55 ~ +150°C

Pinout

Applications

1. Color TV Power Regulator

Other data sheets are available within the file: 2SD1090

D1090 Datasheet PDF Download

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Part Number: 2SC3356, Marking : R25

Function: 100mA, 12V, NPN Silicon Epitaxial Transistor

Package: 3-pin Minimode Type

Manufacturer: NEC ( Renesas Technology )

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Description

The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.

Features

1. Low Noise and High Gain
(1) NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

2. High Power Gain
(2) MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

Absolute Maximum Ratings

1. Collector to Base Voltage : VCBO = 20 V
2. Collector to Emitter Voltage : VCEO = 12 V
3. Emitter to Base Voltage : VEBO = 3.0 V
4. Collector Current : IC = 100 mA
5. Total Power Dissipation : PT = 200 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -65 ~ +150°C

Pinout

Applications

1. Microwave Low Noise Amplifier

Other data sheets are available within the file: C3356, R23, R24

2SC3356 Datasheet PDF Download