TTC5200 PDF Datasheet – 230V, 15A, NPN Transistor

This post explains for the transistor.

The Part Number is TTC5200.

The function of this semiconductor is NPN Triple Diffused TypeTransistor.

The package is TO-3P Type

Manufacturer: Toshiba

Preview images :

TTC5200 pdf

Description

The TTC5200 is Silicon NPN Triple Diffused Type Transistor.

A silicon NPN triple-diffused type transistor refers to a specific type of NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) that is fabricated using silicon as the semiconductor material and employs a triple-diffusion process in its construction.

The term “triple-diffused” refers to the manufacturing technique used to create multiple diffused layers within the transistor structure. Diffusion is a process in semiconductor fabrication that involves introducing impurity atoms into the silicon material to modify its electrical properties.

In a triple-diffused transistor, there are three distinct diffusion regions within the transistor structure, each with a different impurity concentration. These diffusion regions are typically the emitter, base, and collector regions.

The triple-diffused structure offers several advantages over traditional bipolar transistors with single or double diffusion regions. It allows for better control of the transistor’s electrical characteristics, such as gain, breakdown voltage, and switching speed. The multiple diffusion layers help in reducing certain parasitic effects and optimizing transistor performance.

 

Features

1. High collector voltage: VCEO = 230 V (min)

2. Complementary to TTA1943

3. Recommended for 100-W high-fidelity audio frequency amplifier output stage. Unit: mm

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 230 V

2. Collector to Emitter Voltage: Vceo = 230 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 15 A

5. Collector Dissipation : Pc =150 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

TTC5200 pinout datasheeet

Note 1 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature […]

Applications:

1. Power Amplifier

TTC5200 PDF Datasheet

C2240 PDF Datasheet – 120V, 0.1A, NPN Transistor, 2SC2240

Part Number: C2240, 2SC2240

Function: 120V, 100mA, Silicon NPN Transistor

Package: TO-92 Type

Manufacturer: Toshiba

Images:

C2240 equivalent

Description

The C2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplifiers.

:

 

Features

1. Low Noise

2. Low Pulse Noise

3. High DC Current Gain

4. High Breakdown Voltage

2 page
C2240 transistor replacement

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 120 V

2. Collector to Emitter Voltage: Vceo = 120 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 100 mA

5. Total Dissipation : Pc = 300 mW

6. Junction Temperature: Tj = 125°C

7. Storage Temperature: Tsg = -55 ~ +125°C

 

Applications:

1. Low Noise Audio Amplifier

C2240 PDF Datasheet

Posts related to ‘ NPN Transistor ‘

Part number Description
EB13005 400V, 5A, NPN Transistor, TO-220
BC847BLD 45V, 0.2A, NPN Transistor, SOT-23
D1554 600V, 3.5A, NPN Transistor, 2SD1554
C2073 150V, 1.5A, NPN Transistor, 2SC2073
KSD5017 800V, 6A, NPN Transistor, D5017
C4204 Vcbo=30V, NPN Transistor – Sanyo
C2389 120V, 50mA, NPN Transistor, 2SC2389
C5885 NPN Transistor – 2SC5885
C5088 Vcbo=20V, NPN Transistor
2SC3595 20V, 500mA, NPN Transistor