NPN archives - Page 467 of 1048

This is one of the transistor types.

Part Number: 2SD1555

Function: 600V, 5A, Silicon NPN Power Transistor

Package: TO-3P(H)

Manufacturer: Inchange Semiconductor

See the preview image and the PDF file for more information.

Images:

2SD1555 transistor

Description

2SD1555 IS NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR.

Applications:

COLOR TV HORIZONTAL OUTPUT (Damper Diode BUILT IN).

High Collector-Base Voltage(VCBO=1500V) High Speed Switching 2-16E3A ABSOLUTE MAXIMUM RATINGS (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 1500 1500 6 5 50 150 -50~150 Unit V V V A W o o C C ELECTRICAL CHARACTERISTICS (TA=25oC) Characterristic Collector- Emitter Cutoff Current(VBE=0) Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Symbol ICES ICBO IEBO hFE VCE(sat) Test Condition VCE= 1400 V , RBE=0 VCB= 800 V , IE=0 VEB= 4V , IC=0 VCE= 5V , IC=1A IC=5A , IB=1A Min Typ Max 1.0 10 1.0 Unit mA µA mA V 8 5.0 Wing Shing Computer Components Co., (H.K..)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com […]

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo =5 V
4. Collector Current: Ic = 5 A
5. Total Dissipation : Pc = 50 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

2SD1555 Datasheet

Description

DD127D, 3DD127D is a silicon NPN power switching transistor, which uses a planar process, a partial pressure ring terminal structure and a few child life control technology, integrated active anti-saturation network, improve the product breakdown voltage, switching speed and reliability.

Features

1. Low switching losses
2. Reverse leakage current is small
3. High temperature characteristics
4. Suitable switching speed
5. High reliability

Applications

1. Compact electronic energy saving lamp
2. Electronic ballast
3. General power switch circuit

Pinout:

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 700 V
2. Collector to Emitter Voltage: Vceo = 400 V
3. Emitter to Base Voltage: Vebo = 9 V
4. Collector Current: Ic = 2.5 A
5. Total Dissipation : Ptot = 1.25 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Other data sheets are available within the file: 3DD127D

NPN

2SD1555 PDF Datasheet – 600V, 5A, NPN Transistor

Description

2SD1555 Datasheet

DD127D Datasheet PDF – 400V, 2.5A, 50W, NPN Transistor

Description

DD127D Datasheet PDF

Related articles across the web