Collector−Base Voltage

 

Part Number: 3DD1555

Function:  Case-Rated Bipolar Transistor

Package: TO-3P(H)IS Type

Manufacturer: Jilin Sino-Microelectronics

Pinouts:

 

Description

3DD1555 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture : high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product.

Absolute maximum ratings

1. Collector-Base Voltage : BVcbo = 1500 V
2. Collector-Emitter Voltage : BVceo = 600 V
3. Emitter-Base Voltage : BVebo = 6 V
4. Collector Current(DC) : Ic = 5 A
5. Base Current : 3 A
6.  Collector Power Dissipation : Pc = 50 W
7. Junction Temperature: Tj = 150°C
8. Storage Temperature: Tsg = -55 ~ +150°C

Applications

1. Horizontal deflection output for color TV.

Other data sheets are available within the file: 3DD1555-O-A-N-D, D1555

3DD1555 Datasheet PDF Download

 

This post explains for the semiconductor C5149.

See the preview image and the PDF file for more information.

Part Number: C5149

Function: 8A, 1500V, NPN Silicon Transistor

Package: TO-3P, 2-16E3A Type

Manufacturer: Toshiba

Images :

Description

Silicon NPN Triple Diffused Mesa Type Transistor

C5149 Features

1. High Speed : tf = 0.2µs (Typ.)
2. High Voltage: Vcbo = 1500 V
3. Low Saturation Voltage : Vce(sat) = 5 V (Max.)
4. Built-in Damper Type
5. Collector Metal (Fin) is Fully Coverd with Mold Resin.

Pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current (DC) : Ic = 8 A
5. Total Dissipation : Pc = 50 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Applications

1. High Speed Switching
2. Horizontal Deflection Output For Medium Resolution Display, Color TV

Other data sheets are available within the file: 2SC5149

C5149 Datasheet PDF Download