Part Number: 2SC2312

Function: 6A, 20V, RF Power NPN Transistor

Package: TO-220AB Type

Manufacturer: MITSUBISHI ELECTRIC

Pinouts:

 

Description

Mitsubishi 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operationg HF band.

Features

1. High Output, High Gain : Po = 17W, gpe = 10.5 dB, @ 27MHz, 12 V
2. Low IMD
3. Convenient plastic molded package.

Absoulute maximum ratings

1. Collector to Base Voltage: Vcbo = 60 V
2. Emitter to Base Voltage: Vebo = 5 V
3. Collector to Emitter Voltage: Vceo = 20 V
4. Collector Current: Ic = 6 A
5. Power Dissipation : Pc = 25 W

Other data sheets are available within the file: C2312

2SC2312 Datasheet PDF Download

Related articles across the web

• General Purpose Photocoupler

Part Number: 2SD438

Function: 0.7A, 80V, NPN Silicon Transistor

Package: TO-92 Type

Manufacturer: SANYO (Panasonic)

Pinouts:

 

Description

The 2SB560 / 2SD438 are epitaxial planar transistors for complementary push-pull pair having high reverse voltage and low saturation voltage, and suitable universal AF power amplifier use.

Absolute maximum ratings

1. Collector to Base Voltage: Vceo = 100 V
2. Collector to Emitter Voltage: Vceo = 80 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 0.7 A
5. Collector Current (Pulse) : Icp = 1.0 A
6. Collector Dissipation : Pc = 900 mW

Applications

1. Low-Frequency Power Amp

Other data sheets are available within the file: 2SD560, D438, D560

 

2SD438 Datasheet PDF Download

Related articles across the web

• 14D471K Datasheet – 14Pie, 470V, Varistor