NPN

2SC2055 Datasheet PDF – 9V, 0.3A, RF Power NPN Transistor

Posted on by pinout

Part Number: 2SC2055

Function: RF Power NPN Transistor

Package: TO-92L Type

Manufacturer: MITSUBISHI ELECTRIC

Pinouts:

2SC2055 datasheet

 

Description

2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications.

Features

1. High power gain : Gpe > 13 dB ( @ Vcc = 7.2V, Po = 0.2W, f = 175 MHz )
2. Emitter ballasted construction, gold metallization for high reliability and good performances
3. TO-92 similar package is combinient for mounting

Absoulte maximum ratings ( Tc = 25’C )

1. Collector to base Voltage: Vcbo = 18 V
2. Emitter to base Voltage: Vebo = 4 V
3. Collector to emitter Voltage: Vceo = 9 V
4. Collector current : Ic = 0.3 A
5. Collector dissipation : 0.5 W ( Ta = 25’C )

Application

Driver amplifiers in general in VHF band portable or hand-held radio applications.

 

Other data sheets are available within the file: C2055

2SC2055 Datasheet PDF Download


2SC2055 pdf

2SC3709 Datasheet – Vceo=50V, NPN Transistor – Toshiba

Posted on by pinout

Part Number: 2SC3709

Function: Silicon NPN Epitaxial NPN Transistor

Package: TO-220, 2-10R1A type

Manufacturer: Toshiba

Pinouts:

2SC3709 datasheet

 

Description

1. Low collector saturation voltage: VCE (sat) = 0.4 V (max)
2. High-speed switching: tstg = 1.0 μs (typ.)
3. Complementary to 2SA1451A

Absolute Maximum Ratings

1. Collector-Base Voltage: Vceo = 60 V
2. Collector-Emitter Voltage: Vceo = 50 V
3. Emitter-Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 12 A
5. Base Current : Ib = 2 A
6. Collector Power Dissipation ( Tc = 25’C ) : Pc = 30 W

[ … ]

 

Applications

1. High Current Switching
Other data sheets are available within the file: C3709, C3709A, 2SC3709A

2SC3709 Datasheet PDF Download

2SC3709 pdf