C3420 Transistor – 20V, 5A, NPN, Datasheet, 2SC3420 ( PDF )

Part Number: 2SC3420

Function: 20V, 5A, NPN Transistor

Package: TO-126 Type

Manufacturer: Toshiba

Images:C3420 pdf datasheet

Description

The C3420 is 20V, 5A, Silicon NPN Epitaxial Type Transistor. This is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

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Features:

1. High DC current gain :

(1) hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A)

(2) hFE = 70 (min) (VCE = 2 V, IC = 4 A)

2. Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)

3. High collector power dissipation :

(1) PC = 10 W (Tc = 25°C),

(2) PC = 1.5 W (Ta = 25°C)

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 50 V

2. Collector to Emitter Voltage: Vceo = 20 V

3. Emitter to Base Voltage: Vebo = 8 V

4. Collector Current: Ic = 5 A

5. Collector Dissipation : Pc = 1.5 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Strobe Flash

2. Audio Power Amplifier

 

C3420 PDF Datasheet

J6810D PDF Datasheet – 1500V, NPN Transistor – FJAF6810D

This post explains for the 10A, transistor.

The Full Part Number is J6810D, FJAF6810D.

The function of this transistor is 750V, 10A, NPN Transistor.

The package is TO-3PF Type

The manufacturers of this product is Fairchild Semiconductor.

See the preview image and the PDF file for more information.

Preview images :

J6810D pinout datasheet

Description

J6810D is 750V, 10A, NPN Triple Diffused Planar Silicon Transistor.

Overall, a “Silicon NPN Triple Diffused transistor” is a transistor made of silicon with an NPN configuration and manufactured using a triple diffusion process. This combination of materials and manufacturing techniques helps create a transistor with improved performance and capabilities. These transistors are commonly used in various applications, including amplifiers, signal processing, and switching circuits.

Features:

• High Collector-Base Breakdown Voltage : BVCBO = 1500V

• High Switching Speed : tF(typ.) =0.1μs

• For Color TV

Absolute Maximum Ratings

1. Collector-Base Voltage : VCBO = 1500 V
2. Collector-Emitter Voltage : VCEO = 750 V
3. Emitter-Base Voltage : VEBO= 6 V
4. Collector Current (DC) : IC = 10 A
5. Collector Current (Pulse) : ICP = 20 A
6. Collector Dissipation : PC = 60 W
7. Junction Temperature : TJ = 150 °C

J6810D pdf FJAF6810D

Applications:

1. High Voltage Color Display Horizontal Deflection Output (Damper Diode Built-In)

 

J6810D PDF Datasheet

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