C3807 PDF Datasheet – 25V, 2A, NPN Transistor – 2SC3807

Part Number: C3807, 2SC3807

Function: 25V, 2A, NPN Transistor

Package: TO-126LP type

Manufacturer: Sanyo Semicon Device

Images:C3807 pdf pinout

Description

C3807 is 25V, 2A, NPN Epitaxial Planar Silicon Transistor.

 

Features

1. Large current capacity (IC=2A).

2. Adoption of MBIT process.

3. High DC current gain (hFE=800 to 3200).

4. Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).

5. High VEBO (VEBO≥15V). Specifications

 

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C3807 datasheet transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 30 V

2. Collector to Emitter Voltage: Vceo = 25 V

3. Emitter to Base Voltage: Vebo = 15 V

4. Collector Current: Ic = 2 A

5. Collector Dissipation : Pc = 1.2 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Low-Frequency General-Purpose Amplifier Applications, Drivers.

C3807 PDF Datasheet

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C3337 PDF Datasheet – 15V, 100mA, NPN Transistor

Part Number: C3337

Function: 15V, 100mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Hitachi Semiconductor

Images:C3337 pdf pinout

Description

C3337 is 15V, 100mA, Silicon NPN Transistor. 

 

Features:

1. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.

2. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

3. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.
 

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 20 V

2. Collector to Emitter Voltage: Vceo = 15 V

3. Emitter to Base Voltage: Vebo = 3 V

4. Collector Current: Ic = 100 mA

5. Collector Dissipation : Pc = 600 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C3337 datasheet transistor

Applications:

1. UHF / VHF Wide Band Amplifier.

C3337 PDF Datasheet

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