Phototransistor archives - Page 7 of 27

Description

The SFH618A (DIP) and SFH6186 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to silicon planar phototransistor detector, and isincorporated in a plastic DIP-4 or SMD package.

Features

• Good CTR linearity depending on forward current
• Low CTR degradation
• High collector emitter voltage, VCEO = 55 V
• Isolation test voltage, 5300 VRMS
• Low coupling capacitance
• End stackable, 0.100″ (2.54 mm) spacing
• High common mode transient immunity

Applications

• Telecom
• Industrial controls
• Battery powered equipment
• Office machines

Other data sheets are available within the file:

SFH61862, SFH-6186, SFH6186-3X001T, SFH61864

Part Number: PS2501-1

Function: Photocoupler, Phototransistor

Package: DIP 4 Pin Type

Manufacturer: NEC ( Renesas Technology )

Pinouts:

PS2501-1 datasheet

Description

The PS2501-1, PS2501-4 and PS2501L-1, PS2501L-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2501-1, PS2501-4 are in a plastic DIP (Dual In-line Package) and the PS2501L-1, PS2501L-4 are lead bending type (Gull wing) for surface mount.

Features

1. High isolation voltage (BV = 5,000 Vr.m.s.)

2. High collector to emitter voltage (VCEO= 80 V)

3. High-speed switching (tr= 3 μs TYP., tf= 5 μs TYP.)

4. Ordering number of tape product: PS2501L-1-F3: 2 000 pcs/reel

5. Safety standards

6. UL approved: No. E72422

Applications:

1. Power supply

2. Telephone / FAX.

3. FA/OA equipment

4. Programmable logic controller

Other data sheets are available within the file: 2501, PS2501-2, PS2501-3, PS2501-4