2SA1626 Transistor – 400V, 2A, PNP ( Datasheet PDF )

Part Number: 2SA1626

Function: – 400V, -2A, PNP Silicon Transistor

Manufacturer: Renesas Electronics

Image and Pinouts:

2SA1626 datasheet

 

Description

This is PNP Silicon Transistor. The 2SA1626 is designed for general purpose amplifier and high speed switching applications.

Features

1. High Voltage.

2. High Speed Switching.

3. Low Collector Saturation Voltage.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 400 V

2. Collector to Emitter Voltage: Vceo = – 400 V

3. Emitter to Base Voltage: Vebo = – 7 V

4. Collector Current: Ic = – 2 A

5. Collector Dissipation : Pc = 1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

 

2SA1626 Datasheet PDF Download


2SA1626 pdf

Other data sheets are available within the file: A1626

2SA1982 Datasheet PDF – 150V, 50mA, PNP Transistor

Part Number: 2SA1982

Function: -150V, -50mA, PNP Transistor

Package: MT-2-A1 Type

Manufacturer: Panasonic Corporation

Image and Pinouts:

2SA1982 datasheet

Description

This is -150V, -50mA, Silicon PNP epitaxial planer type transistor.

 

Features

1. Satisfactory foward current transfer ratio hFE collector current IC characteristics.

2. High collector to emitter voltage VCEO.

3. Small collector output capacitance Cob

4 .Complementary to 2SC5346

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 150 V

2. Collector to Emitter Voltage: Vceo = – 150 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 50 mA

5. Total Dissipation : Pc = 1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Low-frequency high breakdown voltage amplification

2. Complementary to 2SC5346

Other data sheets are available within the file: A1982

2SA1982 Datasheet PDF Download


2SA1982 pdf