PNP

BF484 Datasheet PDF – TO92, Vcbo = -250V, PNP Transistor

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Part Number: BF484

Function: Vcbo = -250V, -100mA, PNP Transistor

Package:  TO-92 Type

Manufacturer: Philips Semiconductor

Image and pinout

BF484 transistor datasheet pinout

Description

This is 250V, 100mA, Silicon Planar epitaxial PNP Transistor.

The term “PNP” refers to the polarities of the three regions in the transistor: the P-type base, the N-type collector, and the P-type emitter.

PNP transistors operate as current-controlled current sources and can be used for amplification or switching applications. In a common-emitter configuration, a PNP transistor amplifies the input current applied to the base terminal, producing an amplified output current at the collector terminal.

 

BF484 reference data
Specifications

1. Collector-base Capacitance-Max : 4.0 pF

2. Collector Current-Max (IC) : 0.1 A

3. Collector-emitter Voltage-Max : 250 V

4. Configuration : SINGLE

5. DC Current Gain-Min (hFE) : 50.0

Applications:

1. Video output stages of black-and-white and colour television receivers.

 

BF484 Datasheet PDF

datasheet pdf


 

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BC857BS Datasheet PDF – 45V, 100mA, PNP Transistor

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Part Number: BC857BS, Marking : 3Ft

Function: -45V, -100mA, PNP General Purpose Double Transistor

Package: SC-88, SOT-363 Type

Manufacturer: NXP Semiconductors.

Image and Pinouts:

BC857BS datasheet

 

Description

The BC857BS is PNP double transistor in an SC-88, SOT363 plastic package. NPN complement: BC847BS.

A PNP transistor is a type of bipolar junction transistor (BJT) that has a “positive-negative-positive” (PNP) configuration.

The term “PNP” refers to the polarities of the three regions in the transistor: the P-type base, the N-type collector, and the P-type emitter.

Features

1. Low collector capacitance

2. Low collector-emitter saturation voltage

3. Closely matched current gain

4. Reduces number of components and boardspace

5. No mutual interference between the transistors.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 50V

2. Collector to Emitter Voltage: Vceo = – 45V

3. Emitter to Base Voltage: Vebo = – 5V

4. Collector Current: Ic = -100mA

5. Total Dissipation : Ptot = 200mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. General purpose switching and amplification

Other data sheets are available within the file: BC857B, BC857

BC857BS Datasheet PDF Download


BC857BS pdf