B1453 Transistor – 60V, 3A, PNP, Equivalent, 2SB1453 ( PDF )

Part Number: B1453, 2SB1453

Function: – 60V, -3A, Silicon PNP Transistor

Package: TO-220 Type

Manufacturer: NEC

Images:B1453 pdf pinout

Description

The B1453 is a power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.

Characteristics:

1. Polarity: In a PNP transistor, the majority charge carriers are holes, which flow from the emitter to the collector. The emitter is negative relative to the base, and the collector is positive relative to the base.

2. Current flow: When a small current is applied to the base terminal, it allows a much larger current to flow from the emitter to the collector. This is called amplification or gain, and it makes the PNP transistor useful as an electronic switch or amplifier.

3. Voltage levels: The voltage levels in a PNP transistor are opposite to those in an NPN transistor. In a NPN transistor, the base-emitter junction is forward-biased and the collector-base junction is reverse-biased.

Features

1. High DC current amplifier ratio : hFE ≥ 100 (VCE = – 5 V, IC = – 0.5 A)

2. Mold package that does not require an insulating board or insulation bushing

B1453 transistor datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 60 V

2. Collector to Emitter Voltage: Vceo = – 60 V

3. Emitter to Base Voltage: Vebo = – 7 V

4. Collector Current: Ic = – 3 A

5. Total Power Dissipation : Pc = 2 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

B1453 PDF Download

A970 Transistor – PNP, 120V, 100mA, 2SA970 ( PDF )

Part Number: A970, 2SA970

Function: – 120V, – 100mA, PNP Transistor

Package: TO-92 tye

Manufacturer: Toshiba

Images:A970 pdf pinout

Description

The A970 is 120V, 100mA, Silicon PNP Transistor. 

Characteristics:

Features

• Low noise : NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 μA, f = 1 kHz

• High DC current gain: hFE = 200~700

• High breakdown voltage: VCEO = −120 V

• Low pulse noise. Low 1/f noise

A970 transistor datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 120 V

2. Collector to Emitter Voltage: Vceo = – 120 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 100 mA

5. Collector Dissipation : Pc = 300 mW

6. Junction Temperature: Tj = 125°C

7. Storage Temperature: Tsg = -55 ~ +125°C

Applications:

1. Low Noise Audio Amplifier

A970 PDF Download