Part Number: B649, 2SB649

Function: – 120V, -1.5A, PNP Transistor

Package: SOT-89, TO-126, TO-126C, TO-92 Type

Manufacturer: Unisonic Technologies

Images:

Description

B649 is -120V, 1.5A, PNP SILICON TRANSISTOR. 

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 180 V

2. Collector to Emitter Voltage: Vceo = – 120 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 1.5 A

5. Junction Temperature: Tj = 150°C

6. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 SOT-89 Applications –

2. Low frequency power amplifier complementary pair with UTC 2SB669/A

 

B649 PDF Datasheet

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• General-Purpose Operational Amplifier

Part Number: B1412, 2SB1412

Function: – 20V, – 5A, PNP Transistor

Package: CPT3, SC-63 Type

Manufacturer: Rohm

Images:

Description

The B1412 is Epitaxial planar type PNP silicon transistor. 

Characteristics:

Features

1. Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A)

2. Excellent DC current gain characteristics.

3. Complements the 2SD2118.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 30 V

2. Collector to Emitter Voltage: Vceo = – 20 V

3. Emitter to Base Voltage: Vebo = – 6 V

4. Collector Current: Ic = – 5 A

5. Collector Dissipation : Pc = 1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

B1412 PDF Datasheet