power

IRFZ34NL Datasheet – Vdss=55V, HEXFET Power MOSFET – IRF

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Part Number: IRFZ34NL, IRFZ34NS, IRFZ34

Function: Vdss=55V, HEXFET Power MOSFET

Package : TO-262, D2Pak type

Manufacturer: IRF -> Infineon Technologies

Image :

IRFZ34NL-datasheet-pinout

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version  ( IRFZ34NL ) is available for lowprofile applications.

Pinout
IRFZ34NL-HEXFET-MOSFET
Features

1. Advanced Process Technology
2. Surface Mount (IRFZ34NS)
3. Low-profile through-hole (IRFZ34NL)
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated

 

IRFZ34NL PDF Datasheet Download

H9N03LA Datasheet – 25V, 30A, OptiMOS Power Transistor

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Part Number: H9N03LA

Function: 25V, 30A, OptiMOS 2 Power Transistor

Package: TO-252-3, TO-251-3 Type

Manufacturer: Infineon Technologies

Pinouts:

H9N03LA datasheet

 

Description

1. Ideal for high-frequency dc/dc converters
2. Qualified according to JEDEC for target application
3. N-channel, logic level
4. Excellent gate charge x RDS(on)product (FOM)
5. Superior thermal resistance
6. 175 °C operating temperature
7. Pb-free lead plating; RoHS compliant

Absolute maximum ratings ( Tc=25’C )

1. Continuous drain current : Id = 30 A
2. Pulsed drain current : Id, pulse = 210 A
3. Avalanche energy, single pulse : Eas = 80 mJ
4. Gate source voltage :  VGS = ±20 V
5. Power dissipation : P tot =  52 W

Other data sheets are available within the file: H9N03, IPDH9N03LAG, IPSH9N03LAG

H9N03LA Datasheet PDF Download


H9N03LA pdf