Transistor archives - Page 1006 of 2673

Part Number: BC857BV, Marking : 3F

Function: -45V, PNP General purpose double transistor

Package: SOT-563, SOT-666 Type

Image and Pinouts:

BC857BV datasheet

Description

PNP double transistor in a SOT666 plastic package. NPN complement: BC847BV.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = -50 V

2. Collector to Emitter Voltage: Vceo = -45 V

3. Emitter to Base Voltage: Vebo = -5 V

4. Collector Current: Ic = -0.1 A

5. Total Dissipation : Pc = 0.15 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Features

1. 300 mW total power dissipation

2. Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package

3. Excellent coplanarity due to straight leads

4. Improved thermal behaviour due to flat leads

5. Reduces required board space

6. Reduces pick and place costs.

Applications:

1. General purpose switching and amplification

Other data sheets are available within the file: BC857B, BC857

Description

This is 12V, 50mA, Silicon NPN Epitaxial Transistor.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 20 V

2. Collector to Emitter Voltage: Vceo = 12 V

3. Emitter to Base Voltage: Vebo = 3 V

4. Collector Current: Ic = 50 mA

5. Collector Dissipation : Pc = 150 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. UHF/VHF wide band amplifier