Transistor

2SK3061 Datasheet PDF – N-Ch, 60V, 70A, MOSFET

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Part Number: 2SK3061

Function: 60V, N-CHANNEL POWER MOSFET

Package : TO-220 (MP-45F) Type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SK3061 datasheet

Description

This is 60V, 70A, N-Channel MOSFET.

This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

Features

1.  Low on-state resistance :

(1) RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A)

(2) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, ID= 35 A)

2. Low Ciss: Ciss= 5200 pF TYP.

3. Built-in gate protection diode

4. Isolated TO-220 package

 

Equivalent Circut :

components

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 70 A

4. Total Power Dissipation : Pt = 35 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: K3061

2SK3061 Datasheet PDF Download


2SK3061 pdf

UNR5211 Datasheet PDF – 50V, 100mA, NPN Transistor

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Part Number: UNR5211

Marking Code : 8A

Function: Silicon NPN epitaxial planar type Transistor / Transistor with built-in Resistor

Manufacturer: Panasonic Corporation

Pinouts:

UNR5211 datasheet

 

Description

This is 50V, 100mA, NPN Transistor ( SMD Type )

Applications:

1. For digital circuits

 

Features

1. Costs can be reduced through downsizing of the equipment and reduction of the number of parts

2. S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 50 V

2. Collector to Emitter Voltage: Vceo = 50 V

3. Collector Current: Ic = 100 mA

4. Total Power Dissipation : Pt = 150 mW

5. Junction Temperature: Tj = 150°C

6. Storage Temperature: Tsg = -55 ~ +150°C

 

UNR5211 Datasheet PDF Download


UNR5211 pdf

Other data sheets are available within the file: UNR5210, UNR5212, UNR5213, UNR5214