2SD882 Transistor, 30V, 3A, NPN ( Datasheet PDF )

Posted on July 25, 2021June 8, 2022 by pinout

Part Number: 2SD882

Function: 30V, NPN TRANSISTOR

Package: TO-126 Type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SD882 datasheet

Description

This is 30V, 3A, NPN silicon power transistor.

The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver.

Features

1. Low saturation voltage : VCE(sat)= 0.5 V MAX. (IC= −2 A, IB= 0.2 A)

2. Excellent hFE linearity and high hFE : hFE = 60 to 400 (VCE= 2 V, IC= 1 A)

3. Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 40 V

2. Collector to Emitter Voltage: Vceo = 30 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 3 A

5. Collector Dissipation : Pc = 1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

2SD882 Datasheet PDF Download

Other data sheets are available within the file: D882

NDT2955 Datasheet PDF – 60V, 2.5A, P-ch, MOSFET

Posted on July 21, 2021July 1, 2022 by pinout

Part Number: NDT2955

Function: – 60V, – 2.5A, P-Channel Enhancement Mode Field Effect Transistor

Package: SOT-223 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

NDT2955 datasheet

Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.

This 60V, P-Channel MOSFET is produced using Fairchild Semiconductor’s high voltage Trench process. It has been optimized for power management plications.

Features

1. -2.5A, -60V. RDS(ON) = 0.3W @ VGS = -10V.

2. High density cell design for extremely low RDS(ON).

3. High power and current handling capability in a widely used surface mount package.

Applications

1. DC/DC converter
2. Power management

NDT2955 Datasheet PDF Download

Other data sheets are available within the file: NDT-2955