IRF9130 Datasheet PDF – 100V, 11A, P-Channel MOSFET

Part Number: IRF9130

Function: -100V, -11A, P-Ch, MOSFET

Package: TO-3 Type

Manufacturer: International Rectifier, ( https://www.infineon.com/ )

Image:

IRF9130 datasheet

 

Description

IRF9130 is -100V, -11A, Single P-Channel Hi-Rel MOSFET.

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.

Pinout

IRF9130 pinout mosfet
Features

1. Repetitive Avalanche Ratings
2. Dynamic dv/dt Rating
3. Hermetically Sealed
4. Simple Drive Requirements

Other data sheets are available within the file: JANTX2N6804, JANTXV2N6804

IRF9130 Datasheet PDF Download


IRF9130 pdf

 

K2169 Datasheet PDF – 250V, 400mA, N-Ch, MOSFET

Part Number: K2169

Function: 250V, 400mA, N-Channel MOSFET

Package: NMP Type

Manufacturer: SANYO (Panasonic)

K2169 datasheet mosfet

Description

This is 250V, 400mA, N-Channel, MOSFET.

Features

1. Low ON resistance

2. Very high-speed switching

3. Low-voltage drive.

Pinouts:

K2169 pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 250 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 400 mA

4. Drain power dissipation : PD = 1 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

Very High-Speed Switching

Other data sheets are available within the file: 2SK2169

K2169 Datasheet PDF Download


K2169 pdf

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