TIP100 PDF Datasheet – 60V, 8A, Darlington NPN Transistor

This post explains for the transistor.

The Part Number is TIP100.

The function of this semiconductor is Darlington NPN Transistor.

The package is TO-220 Type.

Manufacturer: TAITRON Components

Preview images :

TIP100 pdf pinout

Description

TIP100 is 60V, 8A, Darlington Power Transistor. A Darlington NPN transistor, often referred to simply as a Darlington transistor, is a configuration of two NPN (Negative-Positive-Negative) bipolar junction transistors (BJTs) connected together to amplify an electrical signal with a very high current gain.

The basic structure of a Darlington NPN transistor consists of two NPN transistors connected in cascade, with the collector of the first transistor (called the “driver” transistor) connected to the base of the second transistor (called the “output” transistor). This arrangement results in a very high current amplification factor or gain.

1. Input Signal: An input current flows into the base of the driver NPN transistor (the first transistor). This input current controls the current through the driver transistor.

2. Driver Transistor: The driver transistor amplifies the input current and allows a larger current to flow from its collector to its emitter. This current, in turn, flows into the base of the output NPN transistor.

3. Output Transistor: The output transistor amplifies the current received from the driver transistor. The collector current of the output transistor can be significantly larger than the base current of the driver transistor.

Features

1. Designed for general-purpose amplifier and low speed switching applications

2. RoHS Compliant

3. Weight : 0.08 ounces, 2.24 grams

TIP100 datasheet transistor

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 60 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 8 A

5. Collector Dissipation : Pc =

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

TIP100 PDF Datasheet

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CS20N60A8H PDF – 600V, 20A, N-Ch, MOSFET, TO-220AB

Part Number: CS20N60A8H

Function: 600V, 20A, Silicon N-Channel Power MOSFET

Package: TO-220AB Type

Manufacturer: Huajing Microelectronics

Images:

CS20N60A8H datasheet mosfet

Description

CS20N60A8H, the 600V, 20A, silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.

Features:

1. Fast Switching

2. Low ON Resistance(Rdson≤0.45Ω)

3. Low Gate Charge (Typical Data:61nC)

4. Low Reverse transfer capacitances(Typical: 20pF)

5. 100% Single Pulse avalanche energy Test

Pinouts:
CS20N60A8H pdf pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Power Dissipation: Pd = 250 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Power switch circuit of adaptor and charger

 

CS20N60A8H PDF Datasheet