2SA1350 Transistor – 30V, 100mA, PNP ( Datasheet PDF )

Part Number: 2SA1350

Function: – 30V, – 100mA, PNP Transistor

Package: SPAK Type

Manufacturer: Renesas Electronics

Image:

2SA1350 datasheet

 

Description

This is -30V, -100mA, Silicon PNP Epitaxial Transistor.

Features

1. Low frequency low noise amplifier

2. HF amplefier

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to base voltage VCBO : –40 V

2. Collector to emitter voltage VCEO : –30 V

3. Emitter to base voltage VEBO : –5 V

4. Collector current IC : –100 mA

5. Collector power dissipation PC : 300 mW

6. Junction temperature Tj : 150 °C

7. Storage temperature Tstg : –55 to +150 °C

 

 

2SA1350 Datasheet PDF Download


2SA1350 pdf

Other data sheets are available within the file: A1350

2SA1697 Transistor – 200V, 200mA, PNP ( Datasheet PDF )

Part Number: 2SA1697

Function: – 200V, – 200mA, PNP Transistor

Package: TO-220ML Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

2SA1697 datasheet

 

Description

This is a – 200V, – 0.2A, PNP Transistor.

 

Features

1. High fT: fT=300MHz.

2. High breakdown voltage : VCEO=200V min.

3. Small reverse transfer capacitance and excellent high frequency characteristic :
Cre=2.2pF/NPN, 2.7 pF/PNP

4. Adoption of FBET process.

5. Micaless type.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 200 V

2. Collector to Emitter Voltage: Vceo = – 200 V

3. Emitter to Base Voltage: Vebo = – 3 V

4. Collector Current: Ic = – 200 mA

5. Collector Dissipation : Pc = 1.8 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. High-definition CRT display video output, wide-band amplifier.

 

2SA1697 Datasheet PDF Download


2SA1697 pdf

Other data sheets are available within the file: 2SC4474, A1697, C4474