Transistor

2SD1869 Transistor – 200V, 0.1A, NPN ( Datasheet PDF )

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Part Number: 2SD1869

Function: 200V, 0.1A, Silicon NPN Epitaxial Transistor

Package: TO-92MOD type

Manufacturer: Hitachi (Renesas Electronics)

Image and Pinouts:

2SD1869 datasheet

 

Description

This is a 200V, Silicon NPN Epitaxial Transistor.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 200 V

2. Collector to Emitter Voltage: Vceo = 200 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 100 mA

5. Collector Power Dissipation : Pc = 0.9 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Low frequency high voltage amplifier

 

 

2SD1869 Datasheet PDF Download


2SD1869 pdf

Other data sheets are available within the file: 2SD1868, D1868, D1869

K2724 Datasheet – MOSFET, 60V, 35A, N-Ch, Transistor, TO-220

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Part Number: K2724

Function: 60V, 35A, N-CHANNEL POWER MOSFET

Package: TO-220 Type

Manufacturer: Renesas Electronics

Image and Pinouts:

K2724 datasheet

Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Features

1. Low On-Resistance :

(1) RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A)
(2) RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A)

2. Low Ciss Ciss =1 200 pF Typ.

3. Built-in G-S Protection Diode

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 35 A

4. Total Power Dissipation : Pt = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: 2SK2724

K2724 Datasheet PDF Download


K2724 pdf