Transistor archives - Page 1088 of 2673

Features

1. High VEBO.

2. Wide ASO and high durability against breakdown.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 50 V

3. Emitter to Base Voltage: Vebo = 15 V

4. Collector Current: Ic = 150 mA

5. Collector Dissipation : Pc = 200 mW

6. Junction Temperature: Tj = 125°C

7. Storage Temperature: Tsg = -55 ~ +125°C

Applications:

1. High VEBO, AF Amp

Part Number: K1482

Function: 30V, 1.5A, N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Package: TO-92 type

Manufacturer: NEC (Renesas Technology)

Image and Pinouts:

K1482 datasheet

Description

The K1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply.

The device featuring low on-state resistance is of the voltage drive type and thus is ideal for driving actuators such as motors, solenoids, and relays.

Features

1. Low on-state resistance :
(1) RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A)
(2) RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A)

2. Voltage drive at logic level (VGS = 4 V) is possible.

3. Bidirectional zener diode for protection is incorporated in between the gate and the source.

4. Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the drain and source.

5. Can be used complementary with the 2SJ196

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 1.5 A

4. Total Power Dissipation: Pd = 750 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: 2SK1482

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Description

Features

2SC3134 Datasheet PDF Download

K1482 Datasheet – 30V, 1.5A, MOSFET, Transistor, TO-92

Description

Features

K1482 Datasheet PDF Download