Transistor

G30H603 Datasheet – 600V, 30A, IGBT, Transistor ( PDF )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: G30H603

Function: 600V IGBT (high speed switching series third generation)

Package: TO-220 Type

Manufacturer: Infineon Technologies

Images and Pinouts:

G30H603 datasheet

 

Description

This is 600V, High speed IGBT.

Features

• very low turn-off energy
• low VCEsat
• low EMI
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating, halogen-free mould compound, RoHS compliant

Marking Information

components

Absolute maximum ratings ( Ta=25°C )

1. Collector-emittervoltage : Vce = 600 V
2. DC collector current : Ic = 60 A ( Tc=25 °C )
3. DC collector current : Ic = 30 A ( Tc=100 °C )
4. Gate-emitter voltage : Vge = ± 20 V
5. Powerdissipation : Ptot = 187 W

Applications

• uninterruptible power supplies
• welding converters
• converters with high switching frequency

 

Other data sheets are available within the file: IGP30N60H3

G30H603 Datasheet PDF Download


G30H603 pdf

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IRFZ44 Transistor – 60V, 50A, MOSFET ( Datasheet PDF )

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This post explains for the transistor IRFZ44.

Part Number: IRFZ44

Function: 60V, 50A, Power MOSFET

Package: TO-220 Type

Manufacturer: Fairchild

See the preview image and the PDF file for more information.

Images:

IRFZ44 transistor mosfet

Description

This is 60V, 50A, Advanced Power MOSFET.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 50 A

4. Drain power dissipation : PD = 126 W

5. Single pulse avalanche energy : Eas =

6. Avalanche curren : Iar = 50 A

7. Repetitive avalanche energy : Ear = 12.6 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +175 °C

[…]

pinout

IRFZ44 pinout transistor

Features

1. Avalanche Rugged Technology

2. Rugged Gate Oxide Technology

3. Lower Input Capacitance

4. Improved Gate Charge

5. Extended Safe Operating Area

6. 175°C Operating Temperature

7. Lower Leakage Current: 10mA (Max.) @ VDS = 60V

8. Lower RDS(ON): 0.020W (Typ.)

IRFZ44 Transistor Datasheet

IRFZ44 pdf

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