Transistor archives - Page 1107 of 2673

Part Number: 2SD180

Function: Silicon NPN Power Transistor

Package: TO-3 Type

Manufacturer: Inchange Semiconductor

Image and Pinouts:

2SD180 datasheet

Description

2SD180 is Silicon NPN Power Transistor.

1. Collector-Emitter Breakdown Voltage : V(BR)CEO = 70V(Min.)

2. Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max.)@ IC= 5A

3. Good Linearity of hFE

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 80 V

2. Collector to Emitter Voltage: Vceo = 70 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 6 A

5. Total Dissipation : Pc = 60 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

Applications

1. Audio frequency power amplifier and low speed switching

2. Suitable for output stages of 30 ~35 watts audio amplifier and DC-DC converter.

Other data sheets are available within the file: D180

Description

This is a PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.

Let’s take a look at the features of this transistor.

1. 100 mA output current capability

2. Built-in bias resistors

3. Simplifies circuit design

4. Reduces component count

5. Reduces pick and place costs

6. AEC-Q101 qualified

Applications:

1. Low current peripheral driver

2. Control of IC inputs

3. Replaces general-purpose transistors in digital applications

Other data sheets are available within the file: PUMB-13