Part Number: 2SC3356, Marking : R25

Function: 100mA, 12V, NPN Silicon Epitaxial Transistor

Package: 3-pin Minimode Type

Manufacturer: NEC ( Renesas Technology )

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Description

The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.

Features

1. Low Noise and High Gain
(1) NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

2. High Power Gain
(2) MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

Absolute Maximum Ratings

1. Collector to Base Voltage : VCBO = 20 V
2. Collector to Emitter Voltage : VCEO = 12 V
3. Emitter to Base Voltage : VEBO = 3.0 V
4. Collector Current : IC = 100 mA
5. Total Power Dissipation : PT = 200 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -65 ~ +150°C

Pinout

Applications

1. Microwave Low Noise Amplifier

Other data sheets are available within the file: C3356, R23, R24

2SC3356 Datasheet PDF Download

 

Part Number: KD501

Function: A.F Power NPN Transistor

Package: TO-3 Pin Type

Manufacturer: Tesla

Images :

Description

Bipolar silicon diffusion transistor type npn. The collector connected to the metal housing.

0. Collector-Emitter Voltage : 40 V
1. Collector-Base Voltage : 40 V
2. Emitter-Base Voltage : 5 V
3. Current Collector : 20 A
4. Current Base : 7 V
5. Collector Dissipation : 150 W

Application:

Low frequency power amplifiers. Fast large current switches.

Reference Site: SF245 Information

Other data sheets are available within the file: KD-501, KD502, KD503, KD601, KD602, KD605, KD3055, KD3773

KD501 Datasheet PDF Download

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