Semiconductor Informations
Part Number: B1237, 2SB1237
Medium Power Transistor ( Epitaxial planar type PNP silicon transistor )
Manufacturer: Rohm
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Features
1. Low VCE(sat).
VCE(sat)= 0.2V (Typ.)
(IC/IB= –500mA / –50mA)
2) Compliments 2SD1664 / 2SD1858.
Pinout
Absolute maximum ratings (Ta = 25C)
1. Collector-base voltage : Vcbo = -40V
2. Collector-emiiter voltage : Vceo = -32V
3. Emiiter-base voltage : Vebo = -5V
4. Collector current : IC = -1A (DC)
Part Number: B1015, 2SB1015
TRANSISTOR ( Silicon PNP Triple Diffused Type )
Manufacturer: Toshiba Semiconductor
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Description
0. Audio Frequency Power Amplifier Applications
1. Low collector saturation voltage : VCE (sat)= −1.7 V (max), (IC= −3 A, IB= −0.3 A)
2. Collector power dissipation : PC= 25 W (Tc = 25°C)
Pinout
( 1. Base, 2. Collector, 3. Emiiter )
Maximum Ratings (Ta 25°C)
1. Collector-base voltage : VCBO = -60 V
2. Collector-emitter voltage : VCEO = -60 V
3. Emitter-base voltage : VEBO = -7V
4. Collector current : IC = -3A
5. Base current : IB = -0.5A
