Transistor archives - Page 132 of 2673

Description

The 2001FX is 600V, 10A, NPN Transistor.

A 600V, 10A NPN power transistor refers to a specific type of NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) capable of handling a maximum voltage of 600 volts and a continuous current of up to 10 amperes. Power transistors are commonly used in high-power applications where high voltage and current levels need to be switched or controlled.

The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.

Features:

1. NEW SERIES, ENHANCED PERFORMANCE
2. FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
3. HIGH VOLTAGE CAPABILITY
4. HIGH SWITCHING SPEED
5. TIGTHER hfe CONTROL
6. IMPROVED RUGGEDNESS

Applications:

1. HORIZONTAL DEFLECTION FOR COLOR TVS OVER 21 INCHES AND 15 INCHES MONITORS

[…]

The K3265 is one of the MOSFET types.

The Full Part Number is 2SK3265.

This product has 700V, Silicon N Channel MOSFET functions.

The package is TO-220 Type

The manufacturers of this product is Toshiba.

See the preview image and the PDF file for more information.

Preview images :

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K3265 mosfet pinout

Description

K3265 is 700V, 10A, Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain−source ON resistance : RDS (ON) = 0.72 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 7.0 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 700 V)

4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

K3265 pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain−source voltage: VDSS = 700 V

2. Drain−gate voltage (RGS = 20 kΩ): VDGR = 700 V

3. Gate−source voltage: VGSS = ±30 V

4. Drain power dissipation (Tc=25°C): PD = 45 W

5. Single pulse avalanche energy (Note 2) : EAS = 420 mJ

6. Avalanche current : IAR = 10 A

7. Repetitive avalanche energy (Note 3) : EAR = 4.5 mJ

8. Channel temperature: Tch = 150 °C

Applications:

1. Chopper Regulators

2. DC-DC Converter and Motor Drive

Transistor

2001FX PDF – 600V, 10A, NPN Transistor – ST2001FX

Description

2001FX PDF Datasheet

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K3265 PDF Datasheet – 700V, N-Ch, MOSFET – 2SK3265

Description

Features

K3265 PDF Datasheet

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