K15A50D PDF – 500V, 15A, N-Channel, MOSFET, TK15A50D

Part Number: K15A50D, K15A500, TK15A50D, TK15A500

Function: 500V, N-Channel MOSFET, Transistor

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:K15A50D pdf pinout

Description

The K15A50D is 500V, 15A, Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 7.0 S (typ.)

3. Low leakage current: IDSS = 10 μA (VDS = 500 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

K15A50D datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 15 A

4. Drain Power Dissipation: Pd = 50 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

 

K15A50D PDF Datasheet

K4013 PDF – N-Ch, 800V, MOSFET, 2SK4013 – Toshiba

K4013 is one of the Field Effect Transistor types. .

The Full Part Number is 2SK4013.

The function of this semiconductor is 800V, N-Channel MOSFET.

The package is TO-220 Type

The manufacturers of this product is Toshiba Semiconductor.

See the preview image and the PDF file for more information.

Preview images :K4013 pinout datasheet

Description

The K4013 is N-channel, 800V, 6A MOSFET.

An N-channel, 800V, 6A MOSFET refers to a specific type of N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) capable of handling a maximum voltage of 800 volts and a continuous current of up to 6 amperes. MOSFETs are widely used in power electronic applications for their ability to efficiently switch and control high voltages and currents.

Features:

• Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 640 V)
• Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS 800 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR 800 V
3. Gate-source voltage: VGSS ±30 V
4. Drain current : DC, ID = 6A, Pulse, IDP = 18A
5. Drain power dissipation (Tc = 25°C): PD = 45 W
6. Single pulse avalanche energy : EAR = 317 mJ
7. Avalanche current : IAR = 6 A
8. Repetitive avalanche energy : EAR = 4.5 mJ

[…]

K4013 pdf mosfet

N-channel, 800V, 6A MOSFETs are commonly used in various high-voltage power applications, including power supplies, motor drives, inverters, lighting control, industrial equipment, and other circuits where high voltage and moderate current levels are required.

Applications:

1. Switching Regulator

K4013 PDF Datasheet

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