Transistor

P65NF06 Datasheet – N-Ch, 60V, 60A, MOSFET, STP65NF06

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Part Number: P65NF06, STP65NF06

Function: N-channel, 60V, 60A, MOSFET (Transistor)

Package: DPAK, TO-220 type

Manufacturer: STMicroelectronics

Images:P65NF06 pdf pinout

Description

P65NF06 is N-channel 60V, 11.5mΩ, Power MOSFET.

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 60 A

4. Drain power dissipation : Ptot = 110 W

5. Single pulse avalanche energy : Eas = 390 mJ

6. Channel temperature: Tch = 175 °C

7. Storage temperature: Tstg = -55 to +175 °C

P65NF06 datasheet mosfet

Applications:

P65NF06 Datasheet

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D1879 Transistor – 800V, 6A, NPN, 2SD1879 ( Datasheet PDF )

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Part Number: D1879, 2SD1879

Function: 800V, 6A, Silicon NPN Transistor

Package: TO-3PML Type

Manufacturer: Sanyo Semiconductor Corporation

Images:D1879 pdf pinout

Description

The D1879 is 800V, 6A, NPN Triple Diffused Planar Silicon Transistor.

:

Features

1. High speed (tf=100ns).

2. High breakdown voltage (VCBO=1500V).

3. High reliability (Adoption of HVP process).

4. On-chip damper diode.

D1879 datasheet transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 800 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 6 A

5. Collector Dissipation : Pc = 3 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Color TV horizontal diflection output.

2. Color display horizontal deflection output.

D1879 PDF Datasheet