Part Number: H20R1203
Function: 1200V, 20A, IGBT
Package: TO247 Package
Manufacturer: Infineon Technologies
See the preview image and the PDF file for more information.
Image:
Description
H20R1203 is 1200V, 20A, IGBT. The IGBT is insulated-gate bipolar transistor.
IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
IGBTs are widely used in power electronic applications, such as motor drives, renewable energy systems, and power conversion systems, due to their high efficiency, fast switching speed, and low switching losses. They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
Reverse conducting IGBT with monolithic body diode.
Features :
1. Powerful monolithic body diode with low forward voltage designed for soft commutation only
2. Low EMI
3. Qualified according to JESD-022 for target applications
4. Pb-free lead plating; RoHS compliant
5. TRENCHSTOPTM technology applications offers :
(1) Very tight parameter distribution
(2) High ruggedness, temperature stable behavior
(3) Low VCEsat
(4) Easy parallel switching capability due to positive temperature coefficient in VCEsat
H20R1203 Datasheet
H20R1203 Pinouts :
Applications:
1. Inductive cooking
2. Inverterized microwave ovens
3. Resonant converters
4. Soft swtiching applications
Other data sheets are available within the file: IHW20N120R3
H20R1203 Datasheet PDF Download
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