Transistor

72T02GH PDF Datasheet – N-ch, Power MOSFET, AP72T02GH

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Part Number: 72T02GH, AP72T02GH, AP72T02

Function: 25V, 62A, N-Ch, Power MOSFET

Package: TO-252, TO-251 Type

Manufacturer: Advanced Power Electronics

Images:72T02GH pinout pdf

Description

72T02GH is 25V, 62A, N-Channel MOSFET. 

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP72T02GJ) are available for low-profile applications.

Features

1. Simple Drive Requirement

2. Low On-resistance

3. Fast Switching Characteristic

72T02GH datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 62 A (Tc = 25°C)

4. Total Power Dissipation: Pd = 60 W (Tc = 25°C)

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

 

72T02GH PDF Datasheet

G4PC40W PDF – IRG4PC40W ( 600V, IGBT, TO-247AC )

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Part Number: G4PC40W, IRG4PC40W

Function: 600V, 40A, IGBT ( The IGBT is insulated-gate bipolar transistor. )

Package: TO-247AC type

Manufacturer: IRFG4PC40W pdf pinout

Description

THE G4PC40W IS INSULATED GATE BIPOLAR TRANSISTOR. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features:

• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

• Industry-benchmark switching losses improve efficiency of all power supply topologies

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V G E VCE(on) typ. = 2.05V @VGE = 15V, IC = 20A n-channel

 

G4PC40W datasheet igbt

 

Benefits:

• Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (“hard switched” mode)

• Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-247AC

 

Absolute Maximum Ratings (Tc = 25°C)

1. Collector-to-Emitter Breakdown Voltage : Vces = 600 V

2. Continuous Collector Current : 40 A

3. Pulsed Collector Current: Icm = 160 A

4. Maximum Power Dissipation : PD = 160 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

G4PC40W PDF Datasheet