Transistor

K2611 MOSFET – 900V, 9A, Transistor ( 2SK2611 PDF )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K2611, 2SK2611

Function: 900V, 9A, Silicon N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Toshiba Semiconductor

K2611 pdf pinout

Description

The K2611 is TOSHIBA, 900V, 9A, Silicon N Channel MOS Type Field Effect Transistor.

This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

 

Features

1. Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 7.0 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement−mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

K2611 datasheet transistor

Applications:

1. DC−DC Converter

2. Relay Drive and Motor Drive

K2611 PDF Datasheet

FGA25N120AN PDF Datasheet – 1200V, 25A, IGBT, Transistor

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Part Number: FGA25N120AN

Function: 1200V, 25A, IGBT

Package: TO-3P Type

Manufacturer: Fairchild Semiconductor

Images:FGA25N120AN pdf pinout

Description

The FGA25N120AN is 1200V, 25A, IGBT (Insulated Gate Bipolar Transistor).

Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

The IGBT has several advantages over traditional power semiconductors, such as bipolar transistors and MOSFETs, making it a popular choice for high-power applications. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Features

1. High speed switching

2. Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A

3. High input impedance

FGA25N120AN igbt datasheet

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

FGA25N120AN PDF Datasheet