B817C Transistor – PNP, 140V, 12A, Datasheet PDF ( 2SB817C )

Part Number: B817C, 2SB817C

Function: -140V, -12A, PNP Transistor

Package: TP-3PB Type

Manufacturer: Sanyo Electric

Images:B817C datasheet

Description

B817C is -140V, -12A, PNP Epitaxial Planar Silicon Transistor. 

PNP transistors comprise the following key components:

PNP transistors control the flow of a large current (collector current) between the emitter and collector using a small current applied to the base (base current). When a base current flows, the PNP transistor permits the flow of electrons from the emitter to the collector, resulting in an increase in collector current. Reducing the base current reduces the collector current. Consequently, PNP transistors are valuable electronic components for controlling large output currents with small input currents.

Features

1. Large current capacitance.

2. Wide ASO and high durability against breakdown.

3. Adoption of MBIT process.

Pinouts:

B817C pdf pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 160 V

2. Collector to Emitter Voltage: Vceo = – 140 V

3. Emitter to Base Voltage: Vebo = – 6 V

4. Collector Current: Ic = – 12 A

5. Collector Dissipation : Pc = 2.5 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

B817C PDF Datasheet

C536 Transistor – 30V, 100mA, NPN, Datasheet, 2SC536

Part Number: C536, 2SC536

Function: 30V, 100mA, NPN Transistor

Package: TO-92 Type

Manufacturer: WEJ

Images:C536 pdf datasheet

Description

The 2SC536 is NPN Transistor.

Features

1. Power dissipation : PCM = 400 mW (Tamb=25℃)

2. Collector current : ICM = 100 mA

3. Collector-base voltage : V(BR)CBO =  40 V

4. Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 40 V

2. Collector to Emitter Voltage: Vceo = 30 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 100 mA

5. Collector Dissipation : Pc = 400 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Switching and AF amplifier

 

 

C536 PDF Datasheet

C536 pdf

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