BD201 PDF Datasheet – 45V, 8A, NPN Power Transistor

Part Number: BD201, BD203

Function: 45V, 8A, Silicon NPN Power Transistor

Package: TO-220C Type

Manufacturer: Inchange Semiconductor

Images:

1 page
BD201 pdf datasheet

Description

BD201 is 45V, 8A, Silicon NPN Power Transistor. This is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.

Features

1. Collector-Emitter Breakdown Voltage :

(1) V(BR)CEO = 45V(Min)- BD201, 60V(Min)- BD203

2. Complement to Type BD202/204

3. Minimum Lot-to-Lot variations for robust device performance and reliable operation

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 45 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic =8 A

5. Collector Dissipation : Pc = 60 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

 

BD201 PDF Datasheet

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HY1606A PDF – N-Ch, 60V, 60A, MOSFET ( Datasheet )

Part Number: HY1606A, HY1606AP

Function: 60V, 60A, N-Channel Enhancement Mode MOSFET

Package: TO-220-3L Type

Manufacturer: HOOYI Semiconductor

Images:HY1606A pinout datasheet

 

Description

The HY1606A is 60V, 60A, N-Channel Enhancement Mode MOSFET.

Features

1. 60V/ A, RDS(ON) =10.5 mW (typ.) @ VGS =10V

2. Avalanche Rated

3. Reliable and Rugged

4. Lead Free and Green Devices Available (RoHS Compliant)

5. Power Management for Inverter Systems

 

 

HY1606A PDF

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 25 V

3. Drain current: ID = 65 A

4. Maximum Power Dissipation: Pd = 130 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

HY1606A PDF Datasheet