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Description

This is a bipolar junction transistor (BJT) used in electronic circuits.

It is a PNP Silicon Amplifier Transistor.

The 2N5400 can be used in various applications such as amplification, switching, and voltage regulation. The maximum collector-emitter voltage of this transistor is 120V and the maximum collector current is 600mA.

Features

• Pb−Free Packages are Available

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 130 V

2. Collector to Emitter Voltage: Vceo = 120 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 600 mA

5. Total Device Dissipation: Pd = 625 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Part Number: 5N60C

Function: 600V, 4.5A, N-Channel MOSFET

Package: TO-220, TO-220F Type

Manufacturer: Fairchild

Image

Description

This is 600V, 4.5A, N-Channel QFET Power MOSFET.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Pinout

Features

1. 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V

2. Low gate charge ( typical 15 nC)

3. Low Crss ( typical 6.5 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

Other data sheets are available within the file:

FQP5N60C, FQPF5N60C, FQB5N60C, FQI5N60C

Transistor

2N5400 Datasheet PDF – 120V, 600mA, PNP Transistor

Description

2N5400 Datasheet PDF Download

5N60C Datasheet PDF – 600V, 4.5A, N-Channel MOSFET

Description

Features

5N60C Datasheet PDF

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