Transistor

2N5191 Datasheet PDF – 60V, 4A, NPN Transistor

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Part Number: 2N5191

Function: 60V, 4A, NPN power transistor

Package: TO-225 Type

Manufacturer: ON Semiconductor

Image and Pinouts:

2N5191 datasheet

 

Description

This is 60V, 4A, Silicon NPN Power Transistor.

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195.

Features

1. Epoxy Meets UL 94 V−0 @ 0.125 in.

2. These Devices are Pb−Free and are RoHS Compliant*

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 60 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 4 A

5. Total Dissipation: Pd = 40 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

Applications:

1. For use in power amplifier and switching circuits

Other data sheets are available within the file: 2N5190, 2N5190G, 2N5191G, 2N5192

2N5191 Datasheet PDF Download


2N5191 pdf

IRG4PC50WPBF Datasheet PDF – 600V, 55A, IGBT, Transistor

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Part Number: IRG4PC50WPBF

Function: 600V, 55A, N-Ch, INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier

Pinouts:

IRG4PC50WPBF datasheet

 

Description

This is 600V, 55A, IGBT. The IGBT is insulated-gate bipolar transistor.

Features

1. Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

2. Industry-benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 55 A (Tc = 25°C)

4. Collector Dissipation : Pc = 200 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Benefits :

1. Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (“hard switched” mode)

2. Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

3. Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz)

Other data sheets are available within the file: IRG4PC50, IRG4PC50W, IRG4PC50-WPBF

 

IRG4PC50WPBF Datasheet PDF Download


IRG4PC50WPBF pdf